NTMFD4C85NT1G parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ FET, MOSFET/ NTMFD4C85NT1G

The pictures are for reference only

Brand:

Model:

NTMFD4C85NT1G

Description:

MOSFET 2N-CH 30V 8DFN

Stock:

32432

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.32

The market price fluctuates. Please consult the customer service for the actual price

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

15.4A,29.7A

Drain source voltage (Vdss)

30V

FET Type

2 N Channel(two)Asymmetric type

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

32nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

1960pF @ 15V

On resistance (maximum) for different Ids and Vgs

3 mΩ @ 20A,10V

Power - maximum

1.13W

Vgs (th) (maximum) for different Ids

2.1V @ 250µA

packing

TR,CT,bulk

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-PowerTDFN

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

NTMFD4C85NT1G（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory32432,Price reference "real-time change" China/Hongkong。 NTMFD4C85NT1G package/specs, Download NTMFD4C85NT1G、Datasheet。